发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE |
摘要 |
One embodiment describes a method of manufacturing a semiconductor device. Here, impurities are implanted into a semiconductor body via a first side of the semiconductor body. Thereafter, a drift zone layer on the first side of the semiconductor body is formed. The following is an ablation of the semiconductor body from a second side of the semiconductor body and up to pn junction defined by impurities.
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申请公布号 |
US2013207223(A1) |
申请公布日期 |
2013.08.15 |
申请号 |
US201213584801 |
申请日期 |
2012.08.13 |
申请人 |
IRSIGLER PETER;NEIDHART THOMAS;SCHAGERL GUENTER;SCHULZE HANS-JOACHIM |
发明人 |
IRSIGLER PETER;NEIDHART THOMAS;SCHAGERL GUENTER;SCHULZE HANS-JOACHIM |
分类号 |
H01L21/265;H01L29/06 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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