| 摘要 |
PROBLEM TO BE SOLVED: To provide a stable formulation that can be used in semiconductor deposition process, such as for example, a flowable silicon oxide process.SOLUTION: A formulation includes: a silicon containing precursor selected from an alkoxysilane, arylsilane, or alkoxyalkylsilane; and a catalyst compound including a haloalkoxyalkylsilane or haloaryloxyalkylsilane, wherein the substitutents within the silicon-containing precursor and catalyst compound are the same are described herein. More specifically, the formulation includes: a silicon-containing precursor including an alkoxyalkylsilane or aryloxysilane having a formula of Si(OR)Rand a catalyst including haloalkoxyalkylsilane having a formula of XSi(OR)R; or a silicon-containing precursor including an alkoxysilane or aryloxysilane having a formula of R(RO)Si-R-Si(OR)Rand a catalyst including a haloalkoxyalkylsilane or haloaryloxyalkylsilane having a formula of (RO)R(X)Si-R-Si(OR)R, wherein at least one or all of the Rand Rsubstituents are the same in both the silicon-containing precursor and catalyst compound are described herein. |
