| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of sufficiently filling even a gap between semiconductor chips at the highest position with an underfill material even when the number of semiconductor chip laminates increases, and a manufacturing device used for the same.SOLUTION: A method for manufacturing a semiconductor device according to an embodiment comprises the steps of: (a) laminating a plurality of semiconductor elements on a substrate in multiple stages; (b) holding the substrate horizontally and arranging an underfill material around the semiconductor elements laminated on the horizontally held substrate; (c) inclining the substrate on which the semiconductor elements are laminated so that the underfill material arranged around the semiconductor elements is located at least above the substrate; (d) heating the underfill material and filling a gap between the inclined substrate and the semiconductor element laminated on the substrate and a gap between the laminated semiconductor elements with the heated underfill material; and (e) curing the filled underfill material. |
