发明名称 |
ACOUSTIC WAVE ELEMENT AND ACOUSTIC WAVE DEVICE USING SAME |
摘要 |
A SAW element has a substrate; an IDT electrode located on an upper surface of the substrate and comprises Al or an alloy containing Al; a first film located on an upper surface of the IDT electrode; and a protective layer which covers the IDT electrode provided with the first film and the portion of the substrate exposed from the IDT electrode, which has a thickness from the upper surface of the substrate larger than a total thickness of the IDT electrode and first film, and which contains a silicon oxide. The first film contains a material which has a larger acoustic impedance than the material (Al or the alloy containing Al) of the IDT electrode and the silicon oxide and which has a slower propagation velocity of an acoustic wave than the material of the IDT electrode and the silicon oxide.
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申请公布号 |
US2013207747(A1) |
申请公布日期 |
2013.08.15 |
申请号 |
US201113878116 |
申请日期 |
2011.12.22 |
申请人 |
NISHII JUNYA;KISHINO TETSUYA;TANAKA HIROYUKI;KOBAYASHI KYOHEI;YAMAMOTO KENJI;SHIMOZONO MASAHISA;IKUTA TAKANORI;NISHIMURA MICHIAKI;KYOCERA CORPORATION |
发明人 |
NISHII JUNYA;KISHINO TETSUYA;TANAKA HIROYUKI;KOBAYASHI KYOHEI;YAMAMOTO KENJI;SHIMOZONO MASAHISA;IKUTA TAKANORI;NISHIMURA MICHIAKI |
分类号 |
H03H9/25;H03H9/64 |
主分类号 |
H03H9/25 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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