发明名称 NON-VOLATILE MEMORY DEVICE AND ISPP PROGRAMMING METHOD
摘要 A method programming a non-volatile memory device using an incremental step pulse programming (ISPP) scheme is disclosed. The method includes operating in a first program mode during which a program pulse width is constant and a program voltage is successively increased per ISPP cycle, and during which a program operation and a verify operation are alternately repeated, and operating in a second program mode during which the program pulse width is successively increased per ISPP cycle and the program voltage is constant, and during which the program operation and the verify operation are alternately repeated, wherein operation in the second program mode follows operation in the first program mode only when the program voltage equals a maximum value, or when a verification result count value satisfies a predetermined condition.
申请公布号 US2013208543(A1) 申请公布日期 2013.08.15
申请号 US201313835409 申请日期 2013.03.15
申请人 SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK KI TAE
分类号 G11C16/10 主分类号 G11C16/10
代理机构 代理人
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