COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor device and a manufacturing method of the same, which can effectively reduce leakage current between source-drain.SOLUTION: A compound semiconductor device comprises: a two-dimensional electron gas suppression layer 5 formed on an electron supply layer 4; a source electrode 12s and a drain electrode 12d which are formed at positions that sandwich the two-dimensional electron gas suppression layer 5; and a gate electrode 21 formed on the two-dimensional electron gas suppression layer 5. The compound semiconductor device further comprises an insulation layer 22 including at least a first part 22a which is positioned between the two-dimensional electron gas suppression layer 5 and the gate electrode 21 and which functions as a gate insulation film, and a second part 22b which is positioned on the electron supply layer 4 and between the first part 22a and the drain electrode 12d. The second part 22b includes a tapered, inclined plane 22c at an end on the first part 22a side. The gate electrode 21 is formed so as to follow the inclined plane 22c.