| 发明名称 |
SEMICONDUCTOR COMPONENTS WITH STEEP PHOSPHORUS PROFILE IN A GERMANIUM LAYER |
| 摘要 |
The invention relates to a semiconductor component and to a method for limiting a dopant diffusion, in particular a phosphorus diffusion in germanium. According to the invention, an Si spike is used for this purpose. |
| 申请公布号 |
WO2013117765(A2) |
申请公布日期 |
2013.08.15 |
| 申请号 |
WO2013EP52699 |
申请日期 |
2013.02.11 |
| 申请人 |
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK |
发明人 |
YAMAMOTO, YUJI;TILLACK, BERND |
| 分类号 |
|
主分类号 |
|
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
