发明名称 TRANSFER DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a forming method of a metal thin film, capable of achieving refinement and high yield more than the past, without raising a resistance value of the thin film more than the necessity.SOLUTION: Electroless plating processing is applied to a substrate 40 to which ink 2A containing a catalyst material is transcribed. A metal thin film 42 is selectively formed to a transfer area of the ink 2A on the substrate 40. Moreover, ink 2 is transcribed by using a plate blanket 1, and the contact is done by pressure compression in a transfer process. Alignment becomes easy, and the pressure at the contact is made uniform as a whole, and the yield when the metal thin film 42 is formed improves. Moreover, not the material of the metal thin film 42 but the catalyst material of the electroless plating processing is included. A resistance value of the metal thin film 42 lowers compared with the past, and the refinement of the pattern becomes easy.
申请公布号 JP2013154643(A) 申请公布日期 2013.08.15
申请号 JP20130068654 申请日期 2013.03.28
申请人 SONY CORP 发明人 TANAKA MASANOBU;ISHIHARA HIROSHI;SHIMAMURA TOSHIKI;KAMEI TAKAHIRO
分类号 B41F17/14;B41F1/00;B41N10/02;H05K3/12 主分类号 B41F17/14
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