| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMP polishing solution and a polishing method using the same, which can achieve a sufficiently high polishing speed against a silicon oxide film; and which does not depend on a state of a substrate surface compared with a polishing solution in the past and has high versatility.SOLUTION: A CMP polishing solution contains abrasive grains, an additive agent and water, and contains an organic compound that satisfies predetermined conditions as the additive agent, and targets a substrate having a silicon oxide film on a surface. A polishing method comprises a process of polishing the silicon oxide film by a polishing pad while supplying the CMP polishing solution between the silicon oxide film and the polishing pad. |
