| 摘要 |
PROBLEM TO BE SOLVED: To provide a voltage generation circuit capable of more stabilizing a boost potential, and further to provide a semiconductor memory device.SOLUTION: A voltage generation circuit 50 comprises: a booster circuit 60; and a limiter circuit 70. The booster circuit 60 outputs a first voltage VCP to a first node CP_OUT. The limiter circuit 70 comprises: first and second resistance elements 72 and 73; first and second capacitative elements 74 and 75; a switching element 76; and a comparator 71. In the first capacitative element 74, one electrode is connected to the first node CP_OUT and the other electrode is connected to a second node MON. The switching element 76 connects the first node CP_OUT to loads WL while connecting the second capacitative element 75 to the second node MON. The comparator 71 compares a potential of the second node MON and a reference potential Vref and controls the booster circuit 60 in response to a comparison result. |
