发明名称 |
METHOD FOR PRODUCING GALLIUM NITRIDE SUBSTRATES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES |
摘要 |
A method for separating a III-nitride layer from a substrate. This is done by fabricating a detachment porous region between the III-nitride layer and the substrate through etching. The porous region allows for easy detachment of the III-nitride layer from the substrate. Active layers for electronic and optoelectronic devices can then be grown on the III-nitride layer.
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申请公布号 |
US2013207237(A1) |
申请公布日期 |
2013.08.15 |
申请号 |
US201113879183 |
申请日期 |
2011.10.17 |
申请人 |
WEISBUCH CLAUDE C.A.;SPECK JAMES S.;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
WEISBUCH CLAUDE C.A.;SPECK JAMES S. |
分类号 |
H01L21/762;H01L29/20 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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