METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of reducing a tact time even when a cutting origin region and a gettering region are formed on a semiconductor substrate.SOLUTION: A method for manufacturing a semiconductor device includes a laser beam irradiation step of forming a cutting origin region 8 for causing a crack 21 in a thickness direction of a semiconductor substrate 2 and a second gettering region 18y for capturing an impurity on the semiconductor substrate 2 by modifying the inside of the semiconductor substrate 2 irradiating the semiconductor substrate 2 with a laser beam L. The laser beam irradiation step further includes the steps of: branching the laser beam L into a branched laser beam L1 for cutting and a branched laser beam L2 for gettering; and condensing the laser beam L1 for cutting on the semiconductor substrate 2 and forming a cutting origin region 8 inside the semiconductor substrate 2 along a scheduled cutting line 5, and at the same time condensing the branched laser beam L2 for gettering on the semiconductor substrate 2 and forming the second gettering region 18y at a position different from the cutting origin region 8 inside the semiconductor substrate 2.