发明名称 |
INTEGRATED CIRCUIT HAVING THINNER GATE DIELECTRIC AND METHOD OF MAKING |
摘要 |
An integrated circuit including a first transistor having a first gate dielectric layer with a first thickness. The integrated circuit also includes a second transistor having a second gate dielectric layer with a second thickness and the second transistor is configured to electrically connect to the first transistor. The integrated circuit also includes a third transistor having a third gate dielectric layer with a third thickness and the third transistor is configured to electrically connect to at least one of the first transistor or the second transistor. The first thickness, the second thickness and the third thickness of the integrated circuit are all different.
|
申请公布号 |
US2013207200(A1) |
申请公布日期 |
2013.08.15 |
申请号 |
US201213371168 |
申请日期 |
2012.02.10 |
申请人 |
LU CHIH-HUNG;LEE SONG-BOR;HUANG CHING-KUN;HAO CHING-CHEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LU CHIH-HUNG;LEE SONG-BOR;HUANG CHING-KUN;HAO CHING-CHEN |
分类号 |
H01L27/088;H01L21/8232 |
主分类号 |
H01L27/088 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|