| 摘要 |
A semiconductor device includes a semiconductor substrate, a buried layer, a deep well having a first conductivity type being disposed on the buried layer, a first doped region having the first conductivity type and a well having the second conductivity type being disposed in the deep well, a first heavily doped region having the first conductivity type being disposed in the first doped region, a second heavily doped region having the first conductivity type being disposed in the well, a gate disposed between the first heavily doped region and the second heavily doped region, and a first trench structure and a second trench structure being disposed at the two sides of the gate in the semiconductor substrate. The first trench structure contacts the buried layer, and a depth of the second trench structure is substantially larger than a depth of the buried layer.
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