HETEROSTRUCTURE SI SOLAR CELLS USING WIDE-BANDGAP SEMICONDUCTORS

摘要

To improve the efficiency of heterostructure silicon photovoltaic devices, II-VI wide bandgap semiconductor layers can replace the TCO/doped amorphous silicon/intrinsic amorphous silicon layers on the front side or on both sides of the silicon bulk layer. For example, photovoltaic devices are described containing a first contact electrode; a first doped II- VI semiconductor layer disposed over the first contact electrode; a doped crystalline silicon layer disposed over the first doped II-VI semiconductor layer; and a second contact electrode disposed over the doped silicon layer, where one of the doped crystalline silicon layer and the first doped II-VI semiconductor layer is n-doped and the other is p-doped.