| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a quantum dot film that can obtain the quantum dot film having excellent conductivity and high film quality, and a photoelectric conversion device that has excellent electrooptic characteristics by using the method of manufacturing the quantum dot film.SOLUTION: A quantum dot dispersion solution is prepared which has quantum dot particles, each coated with a surface active surfactant, dispersed in a dispersion solvent. The quantum dot dispersion solution include an excessive surface active surfactant which is not adsorbed by the quantum dot particles. After a coating film is formed by applying the quantum dot dispersion solution, the excessive surface active surfactant is removed which is not adsorbed by the quantum dot particles and included in the coating film. The surface active surfactant is removed by dripping a poor solvent which is soluble in the surface active surfactant and insoluble or slightly soluble in the quantum dot particles over the coating film and bringing the coating film into contact with the poor solvent. Consequently, a light emission layer 16 is formed which is interposed between a hole transport layer 15 and an electron transport layer 17. |
