| 摘要 |
A semiconductor device including a vertical gate and a method for manufacturing the same are disclosed, which prevent a floating body phenomenon, thereby increasing a cell threshold voltage and reducing leakage current, resulting in improved refresh properties of the semiconductor device. The semiconductor device includes a plurality of pillar patterns, including first pillar patterns arranged along a first direction and second pillar patterns arranged along a second direction, formed over a semiconductor substrate; a gate extending in the first direction, arranged along sidewalls of the first pillar patterns, and configured to couple the first pillar patterns; a junction region formed in an upper portion of the pillar patterns; and a conductive line arranged along the sidewalls of the first pillar patterns and provided in a region disposed below the junction region and over the gate.
|
