发明名称 SEMICONDUCTOR DEVICE
摘要 <p>A metal plate (3a) and metal plates (3b-3d) are disposed with a space between the metal plate (3a) and the metal plates (3b-3d). The metal plates (3b-3d) are separated from each other. Transistor elements (1a-1c) are mounted on the metal plate (3a), and the lower surfaces of the transistor elements are commonly bonded to the metal plate (3a). Transistor elements (1d-1f) are mounted on the metal plates (3b-3d), respectively, and the lower surfaces of the transistor elements are individually bonded to the metal plates (3b-3d), respectively. Wiring members (5a-5c) that are separated from each other are individually bonded to the upper surfaces of the transistor elements (1a-1c), respectively. A wiring member (5d) is commonly bonded to the upper surfaces of the transistor elements (1d-1f). The metal plates (3a-3d), the transistor elements (1a-1f), and wiring members (5a-5d) are covered with a molding resin (7).</p>
申请公布号 WO2013118275(A1) 申请公布日期 2013.08.15
申请号 WO2012JP52973 申请日期 2012.02.09
申请人 MITSUBISHI ELECTRIC CORPORATION;KIKUCHI, MASAO;YOSHIMATSU, NAOKI 发明人 KIKUCHI, MASAO;YOSHIMATSU, NAOKI
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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