| 摘要 |
PROBLEM TO BE SOLVED: To form an ion implantation area and an ion non-plantation area within a wafer surface, without disposing a mask-shaped article on and near the wafer surface.SOLUTION: On a surface of a semiconductor wafer 9, two kinds of in-plate areas, namely an entire width ion non-implantation area 13 and a partial ion implantation area 12 which are alternately aligned once or more in a direction orthogonal to a scanning direction of an ion beam are formed. When the partial ion implantation area is formed, while the semiconductor wafer is fixed and ion beam irradiation and the interruption of ion beam irradiation are carried out, reciprocating scanning of the ion beam is repeated until satisfying target dosage amount. When the entire width ion non-implantation area is formed, without carrying out the ion beam irradiation to the semiconductor wafer, the semiconductor wager is moved. By repeating the fixing of the semiconductor wafer and the moving of the semiconductor wafer, an ion implantation area 11 and an ion non-implantation area are formed at required positions of the semiconductor wafer. |
