SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To inhibit increase in interface state density of a MOS interface caused by desorption of terminated hydrogen or a terminated hydrogen group to achieve high channel mobility even when polysilicon is deposited on an insulation film obtained by oxidation of (000-1) plane and (11-20) plane of a silicon carbide semiconductor in a wet atmosphere.SOLUTION: In a silicon carbide semiconductor device manufacturing method which includes a process of forming a gate insulation film on (000-1) plane or (11-20) plane of the silicon carbide semiconductor in contact with the plane of the silicon carbide semiconductor by performing thermal oxidation in a gas containing at least oxygen and moisture, and a process of depositing a polysilicon gate conductive film on the gate insulation film by a low pressure CVD method, hydrogen or a mixed gas of an inert gas and hydrogen is used in a standby atmosphere for temperature stabilization before deposition of the gate conductive film in a deposition apparatus, and in displacement of a process gas after deposition.