| 摘要 |
<p>This thin film semiconductor device (100) has two thin film transistors (100a and 100b). The thin film transistor (100a) is provided with a first gate electrode (111a), a first gate insulation layer (112), a first semiconductor film (113a), an intrinsic semiconductor layer (114a), a first n-type contact layer (116a and 116b) formed contacting the top part of the intrinsic semiconductor layer (114a), a first source electrode (120a) and a first drain electrode (120b). The thin film transistor (100b) is provided with a second gate electrode (111b), a second gate insulation layer (112), a second semiconductor film (113b), an intrinsic semiconductor layer (114b), a second p-type contact layer (117b and 117c) formed contacting the lateral surface of the semiconductor film (113b) and intrinsic semiconductor layer (114b), a second source electrode (120c) and a second drain electrode (120d).</p> |
