发明名称 Semiconductor Device and Method of Forming a Shielding Layer Over a Semiconductor Die After Forming a Build-up Interconnect Structure
摘要 A semiconductor device is made by forming an interconnect structure over a substrate. A semiconductor die is mounted to the interconnect structure. The semiconductor die is electrically connected to the interconnect structure. A ground pad is formed over the interconnect structure. An encapsulant is formed over the semiconductor die and interconnect structure. A shielding cage can be formed over the semiconductor die prior to forming the encapsulant. A shielding layer is formed over the encapsulant after forming the interconnect structure to isolate the semiconductor die with respect to inter-device interference. The shielding layer conforms to a geometry of the encapsulant and electrically connects to the ground pad. The shielding layer can be electrically connected to ground through a conductive pillar. A backside interconnect structure is formed over the interconnect structure, opposite the semiconductor die.
申请公布号 US2013207247(A1) 申请公布日期 2013.08.15
申请号 US201313845329 申请日期 2013.03.18
申请人 STATS CHIPPAC, LTD.;STATS CHIPPAC, LTD. 发明人 PAGAILA REZA A.;HUANG RUI;LIN YAOJIAN
分类号 H01L23/552;H01L21/56 主分类号 H01L23/552
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