POLYACTIDE/SILICON-CONTAINING BLOCK COPOLYMERS FOR NANOLITHOGRAPHY
摘要
The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other polymer is a polylactide. In one embodiment, the block copolymer is synthesized by a combination of anionic and ring opening polymerization reactions. In one embodiment, the purpose of this block copolymer is to form nanoporous materials that can be used as etch masks in lithographic patterning.
申请公布号
WO2013119820(A1)
申请公布日期
2013.08.15
申请号
WO2013US25160
申请日期
2013.02.07
申请人
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM
发明人
ELLISON, CHRISTOPHER, JOHN;WILLSON, CARLTON, GRANT;CUSHEN, JULIA;BATES, CHRISTOPHER, M.