SRAM DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

An SRAM device and a manufacturing method therefor. The SRAM device comprises: a substrate (100); a well region (101) located on the substrate (100), the well region (101) being separated by a shallow groove (102); a source region (103) located in the well region (101) and adjacent to the shallow groove (102); an interlayer dielectric (104) located on the well region (101), a contact hole (105) connected to the source region (103) being provided in the interlayer dielectric (104), and the contact hole (105) making the source region (103) be arranged in symmetric manner along the direction of a line linking the source region (103) and the shallow groove (102). For the SRAM device, less electricity is leaked at an edge of the device, and the device yield is high.