发明名称 |
RESISTIVE MEMORY DEVICE, OPERATING METHOD, AND MEMORY SYSTEM |
摘要 |
A resistive memory device includes a plurality of first switches that connect word lines to a ground line in response a first switch control signal and a plurality of second switches that connect a plurality of global bit lines to a plurality of local bit lines corresponding to the plurality of global bit lines in response to a second switch control signal. |
申请公布号 |
US2013208530(A1) |
申请公布日期 |
2013.08.15 |
申请号 |
US201313762428 |
申请日期 |
2013.02.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH YOUNG HOON;CHOI YOUNG DON;SONG ICK HYUN |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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