| 摘要 |
PROBLEM TO BE SOLVED: To provide a charged particle beam lithography method with which throughput is improved.SOLUTION: A lithography method includes drawing a plurality of cut patterns using a charged particle beam lithography system for a plurality of linear patterns arrayed in fixed pitches P in a second direction which extends along a first direction and is orthogonal with the first direction. When an interval in the second direction between centers of cut patterns in each set of two cut patterns adjacent in the second direction is defined as Ai (wherein (i) is a number specifying the set) and a length specified by the pitch P is defined as X, the plurality of cut patterns are drawn in such a manner that each interval Ai in the second direction between the cut patterns satisfies a relation of Ai=mX (wherein mis 1, 2, 3, ...). |
