METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of increasing thickness controllability of a silicon oxide film covering a fuse element when performing laser trimming.SOLUTION: A method for manufacturing a semiconductor device includes the steps of: forming a fuse element 10 on a semiconductor substrate 1 via an interlayer insulating film 3; forming a silicon oxide film 20 on the interlayer insulating film 3 so as to cover the fuse element 10; forming a silicon nitride film 30 on the silicon oxide film 20; forming an opening 35 for laser trimming through which the fuse element 10 is exposed to the bottom of the opening by partly removing the silicon nitride film 30 and the silicon oxide film 20 by etching; and forming a silicon oxide film 40 at the bottom of the opening 35 to cover the fuse element 10.