发明名称 MICROWAVE EMISSION MECHANISM AND SURFACE WAVE PLASMA PROCESSOR
摘要 PROBLEM TO BE SOLVED: To provide a microwave emission mechanism and surface wave plasma processor capable of securing a desired diameter of surface wave plasma even if input power of microwaves is low or pressure is high.SOLUTION: A microwave emission mechanism 43 comprises: a transmission line 44 for transmitting microwaves; an antenna 81 for emitting the microwaves transmitted through the microwave transmission line 44 into a chamber 1 via a slot 81a; a dielectric member 110b through which the microwaves emitted from the antenna 81 is transmitted, and on the surface of which surface waves are generated; and a DC voltage application member 112 for applying a positive DC voltage to a plasma generation region in which surface wave plasma is generated by the surface waves. The DC voltage application member 112 applies the positive DC voltage to the plasma generation region in such a manner as to spread the surface wave plasma.
申请公布号 JP2013157520(A) 申请公布日期 2013.08.15
申请号 JP20120018193 申请日期 2012.01.31
申请人 TOKYO ELECTRON LTD 发明人 IKEDA TARO;OSADA ISATERU
分类号 H01L21/3065;H01L21/205;H05H1/46 主分类号 H01L21/3065
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