METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE

摘要

PROBLEM TO BE SOLVED: To achieve both: improvement of charge transfer characteristics when charge is output from a charge storage area; and suppression of occurrence of dark current during charge storage.SOLUTION: Depletion voltage in a charge storage area is formed in a range of 0 to supply voltage/2 (V), gate potential of a transfer MOS transistor during a period of charge transfer is formed in a range of the supply voltage/2 to supply voltage (V), and gate potential of the transfer MOS transistor during a period of charge storage is formed in a range of -(supply voltage/2) to 0 (V).