发明名称 |
Multiple Zone Temperature Control for CMP |
摘要 |
To provide improved planarization, techniques in accordance with this disclosure include a CMP station that includes a plurality of concentric temperature control elements arranged over a number of concentric to-be-polished wafer surfaces. During polishing, a wafer surface planarity sensor monitors relative heights of the concentric to-be-polished wafer surfaces, and adjusts the temperatures of the concentric temperature control elements to provide an extremely well planarized wafer surface. Other systems and methods are also disclosed.
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申请公布号 |
US2013210173(A1) |
申请公布日期 |
2013.08.15 |
申请号 |
US201213372872 |
申请日期 |
2012.02.14 |
申请人 |
WU JIANN LIH;LEE BO-I;HUANG SOON KANG;PENG CHIH-I;YANG CHI-MING;LIN CHIN-HSIANG;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WU JIANN LIH;LEE BO-I;HUANG SOON KANG;PENG CHIH-I;YANG CHI-MING;LIN CHIN-HSIANG |
分类号 |
H01L21/66;B24B49/00 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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地址 |
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