发明名称 |
METHOD AND DEVICE FOR A DRAM CAPACITOR HAVING LOW DEPLETION RATIO |
摘要 |
A method of manufacturing a semiconductor integrated circuit device having low depletion ratio capacitor comprising: forming hemispherical grains (HSG) on a poly-silicon; doping the hemispherical grained polysilicon in a phosphine gas; and rapid thermal oxidizing the doped hemispherical grained polysilicon at 850° C. for 10 seconds. The method further comprises nitridizing the rapid thermal oxidized hemispherical-grained polysilicon and depositing a alumina film on the silicon nitride layer. A semiconductor integrated circuit device having a low depletion ratio capacitor according to the disclosed manufacturing method is provided.
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申请公布号 |
US2013207233(A1) |
申请公布日期 |
2013.08.15 |
申请号 |
US201313851466 |
申请日期 |
2013.03.27 |
申请人 |
MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION SEMICONDUCTOR;SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
YANG CHENG;TAO BO;LUO JASON;WU JINGANAG |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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