SPIKE ANNEAL RESIDENCE TIME REDUCTION IN RAPID THERMAL PROCESSING CHAMBERS
摘要
<p>The present invention generally relates to methods of cooling a substrate during rapid thermal processing. The methods generally include positioning a substrate in a chamber and applying heat to the substrate. After the temperature of the substrate is increased to a desired temperature, the substrate is rapidly cooled. Rapid cooling of the substrate is facilitated by increasing a flow rate of a gas through the chamber. Rapid cooling of the substrate is further facilitated by positioning the substrate in close proximity to a cooling plate. The cooling plate removes heat from substrate via conduction facilitated by gas located therebetween. The distance between the cooling plate and the substrate can be adjusted to create a turbulent gas flow therebetween, which further facilitates removal of heat from the substrate. After the substrate is sufficiently cooled, the substrate is removed from the chamber.</p>
申请公布号
WO2013119975(A1)
申请公布日期
2013.08.15
申请号
WO2013US25377
申请日期
2013.02.08
申请人
APPLIED MATERIALS, INC.;LI, JIPING;KOELMEL, BLAKE;HUNTER, AARON MUIR;ADERHOLD, WOLFGANG R.
发明人
LI, JIPING;KOELMEL, BLAKE;HUNTER, AARON MUIR;ADERHOLD, WOLFGANG R.