SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE AND METHODS FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor light emitting device, a semiconductor light emitting device package, and a method for manufacturing the same are provided to improve a surface scattering effect by forming nanowires. CONSTITUTION: A gallium nitride semiconductor stacked structure consists of an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. A p-type electrode (150) is connected to the p-type semiconductor layer and the n-type semiconductor layer. An n-type electrode (160) is connected to the p-type semiconductor layer and the n-type semiconductor layer. Nanowires (170) are formed on the semiconductor stacked structure, and the p-type electrode and the n-type electrode.