| 摘要 |
A semiconductor light emitter device, comprising a substrate (102), an active layer (108) made of germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, wherein a gap (106) is arranged on the substrate, which extends between two bridgeposts (104) laterally spaced from each other, the active layer (108) is arranged on the bridgeposts and bridges the gap, and wherein the semiconductor light emitter device comprises a stressor layer (110), which induces a tensile strain in the active layer above the gap. |
