| 摘要 |
PURPOSE: A vertical type light emitting diode and a manufacturing method thereof are provided to separate a substrate without damage by chemical lift-off. CONSTITUTION: A plurality of light emitting structures is formed on a buffer layer(S130). A transparent electrode layer is laminated on a plurality of the light emitting structures(S140). A reflecting layer is laminated on the top of the transparent electrode layer(S150). A bonding metal layer is laminated on the top of a reflection layer(S160). A sub substrate is bonded by the bonding metal layer(S170). Etching solution is supplied through a via hole of the substrate. The substrate is separated from the light emitting structure(S180). [Reference numerals] (S110) Preparation of substrate; (S120) Lamination buffering layer; (S130) Luminescent structure formation on buffering layer; (S132) Etching; (S140) Lamination of transparent electrode layer; (S150) Lamination of reflective layer; (S160) Lamination of bonding metal layer; (S162) Alignment of first and second bonding metal layer; (S170) Sub-substrate bonding; (S180) Separation of substrate |
