发明名称 |
ENHANCED DENSIFICATION OF SILICON OXIDE LAYERS |
摘要 |
<p>Densifying a multi-layer substrate includes providing a substrate with a first dielectric layer on a surface of the substrate. The first dielectric layer includes a multiplicity of pores. Water is introduced into the pores of the first dielectric layer to form a water-containing dielectric layer. A second dielectric layer is provided on the surface of the water-containing first dielectric layer. The first and second dielectric layers are annealed at temperature of 600° C. or less. In an example, the multi-layer substrate is a nanoimprint lithography template. The second dielectric layer may have a density and therefore an etch rate similar to that of thermal oxide, yet may still be porous enough to allow more rapid diffusion of helium than a thermal oxide layer.</p> |
申请公布号 |
KR20130090880(A) |
申请公布日期 |
2013.08.14 |
申请号 |
KR20137002226 |
申请日期 |
2011.07.08 |
申请人 |
MOLECULAR IMPRINTS, INC. |
发明人 |
MENEZES MARLON;XU FRANK Y.;WAN FEN |
分类号 |
H01L21/316;G03F7/00;H01L21/027;H01L21/324 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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