| 摘要 |
PROBLEM TO BE SOLVED: To form a high-permittivity insulation film suitable for use as a high-permittivity gate insulation film, and having improved controllability and productivity. SOLUTION: A formation method of an insulation film has: a first process for oxidizing the surface layer section of a silicon substrate 101 as a silicon oxide film 102; a second process for forming a metal film 103 on the silicon oxide film 102 under a non-oxidizing atmosphere; a third process for diffusing a metal atom for composing the metal film 103 into the silicon oxide film 102 by exposing the metal film 103 to rare gas plasma under a non-oxidizing atmosphere; and a fourth process for forming a metal silicate film 104 by oxidizing the silicon oxide film 102 where the metal atom is diffused by radical oxidation. The rare gas plasma includes rare gases having an amount of atom closest to that of the metal atom for composing the metal film 103. COPYRIGHT: (C)2009,JPO&INPIT |
