| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming resist patterns capable of highly precisely and stably forming fine patterns having excellent nano-edge roughness. <P>SOLUTION: The method for forming the resist patterns includes selectively exposing resist films formed on a substrate and having a film thickness of ≤50 nm and developing the resist film by using a developing agent for forming the resist patterns being aqueous solution containing an organic solvent. <P>COPYRIGHT: (C)2010,JPO&INPIT |
