MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce the leaning of a pattern by etching a first etch pattern and separating a second etch pattern. CONSTITUTION: An etch object film is etched. A first etch pattern is segmented by a first trench. The first trench is filled with a first insulation film (131a). The first etch pattern is etched. A second etch pattern (109b) is segmented by a second trench.