| 摘要 |
<p>A variable resistance nonvolatile storage element (10) includes: a first electrode (106); a second electrode (104); and a variable resistance layer (115) having a resistance value that reversibly changes based on an electrical signal applied between the electrodes, wherein the variable resistance layer has a structure formed by stacking a first transition metal oxide layer (115x), a second transition metal oxide layer (115y), and a third transition metal oxide layer (115z) in this order, the first transition metal oxide layer having a composition expressed as MO x (where M is a transition metal and O is oxygen), the second transition metal oxide layer having a composition expressed as MO y (where x > y), and the third transition metal oxide layer having a composition expressed as MO z (where y > z).</p> |
