Tunnel field effect transistor

摘要

A tunnel field effect transistor (TFET) and a method of making the same. The transistor includes a semiconductor substrate (42). The transistor also includes a gate (50) located on a major surface of the substrate (42). The transistor further includes a drain (46) of a first conductivity type. The transistor also includes a source (44) of a second conductivity type extending beneath the gate (50). The source (44) is separated from the gate (50) by a channel region (62) and a gate dielectric (20). The transistor is operable to allow charge carrier tunnelling from an inversion layer through an upper surface of the source (44).