发明名称 |
Resistive storage-based semiconductor memory device |
摘要 |
A semiconductor memory device includes a control circuit. The control circuit applies a first voltage to a selected one of a upper interconnections, applies a second voltage to an unselected one of the upper interconnections, applies a third voltage to a first dummy upper interconnection and independently controls the first to third voltages to be set to different values.
|
申请公布号 |
US8508975(B2) |
申请公布日期 |
2013.08.13 |
申请号 |
US20100821585 |
申请日期 |
2010.06.23 |
申请人 |
TOBA TAKAYUKI;NITTA HIROYUKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
TOBA TAKAYUKI;NITTA HIROYUKI |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|