发明名称 |
Binary and ternary metal chalcogenide materials and method of making and using same |
摘要 |
This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. |
申请公布号 |
US8507040(B2) |
申请公布日期 |
2013.08.13 |
申请号 |
US201113156501 |
申请日期 |
2011.06.09 |
申请人 |
XIAO MANCHAO;LEI XINJIAN;YANG LIU;AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
XIAO MANCHAO;LEI XINJIAN;YANG LIU |
分类号 |
C23C16/06;C23C16/08;C23C16/18 |
主分类号 |
C23C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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