发明名称 |
Method and system for split threshold voltage programmable bitcells |
摘要 |
A memory device includes an antifuse. The antifuse is configured to program a bit cell of the memory device. The antifuse is configured with a PMOS device.
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申请公布号 |
US8509023(B2) |
申请公布日期 |
2013.08.13 |
申请号 |
US201213446584 |
申请日期 |
2012.04.13 |
申请人 |
SCHMITT JONATHAN;BROADCOM CORPORATION |
发明人 |
SCHMITT JONATHAN |
分类号 |
G11C17/16 |
主分类号 |
G11C17/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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