发明名称 |
Deposition and selective removal of conducting helplayer for nanostructure processing |
摘要 |
A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
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申请公布号 |
US8508049(B2) |
申请公布日期 |
2013.08.13 |
申请号 |
US20090392017 |
申请日期 |
2009.02.24 |
申请人 |
BERG JONAS S. T.;DESMARIS VINCENT;KABIR MOHAMMAD SHAFIQUL;SALEEM MUHAMMAD AMIN;BRUD DAVID;SMOLTEK AB |
发明人 |
BERG JONAS S. T.;DESMARIS VINCENT;KABIR MOHAMMAD SHAFIQUL;SALEEM MUHAMMAD AMIN;BRUD DAVID |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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