| 发明名称 |
Semiconductor device, process for producing same, and display device |
| 摘要 |
A wire (24) and a pixel electrode (25) are formed on a surface of a flat supporting substrate (21) which surface is opposite to a surface on which a TFT (16) is formed. Accordingly, it is possible to provide an active matrix substrate (2) which makes it possible to suppress a decline in yield.
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| 申请公布号 |
US8507359(B2) |
申请公布日期 |
2013.08.13 |
| 申请号 |
US201013511377 |
申请日期 |
2010.10.19 |
| 申请人 |
SUGA KATSUYUKI;SHARP KABUSHIKI KAISHA |
发明人 |
SUGA KATSUYUKI |
| 分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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