发明名称 |
Semiconductor structure and method of forming the same |
摘要 |
An embodiment of the disclosure includes a semiconductor structure. The semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and different from the first III-V compound layer in composition. An interface is defined between the first III-V compound layer and the second III-V compound layer. A gate is disposed on the second III-V compound layer. A source feature and a drain feature are disposed on opposite side of the gate. Each of the source feature and the drain feature includes a corresponding metal feature at least partially embedded in the second III-V compound layer. A corresponding intermetallic compound underlies each metal feature. Each intermetallic compound contacts a carrier channel located at the interface.
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申请公布号 |
US8507920(B2) |
申请公布日期 |
2013.08.13 |
申请号 |
US201113180268 |
申请日期 |
2011.07.11 |
申请人 |
CHEN PO-CHIH;YU JIUN-LEI JERRY;YAO FU-WEI;HSU CHUN-WEI;YANG FU-CHIH;TSAI CHUN LIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN PO-CHIH;YU JIUN-LEI JERRY;YAO FU-WEI;HSU CHUN-WEI;YANG FU-CHIH;TSAI CHUN LIN |
分类号 |
H01L29/778 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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