发明名称 |
High voltage devices, systems, and methods for forming the high voltage devices |
摘要 |
A high voltage (HV) device includes a gate dielectric structure over a substrate. The gate dielectric structure has a first portion and a second portion. The first portion has a first thickness and is over a first well region of a first dopant type in the substrate. The second portion has a second thickness and is over a second well region of a second dopant type. The first thickness is larger than the second thickness. A gate electrode is disposed over the gate dielectric structure. A metallic layer is over and coupled with the gate electrode. The metallic layer extends along a direction of a channel under the gate dielectric structure. At least one source/drain (S/D) region is disposed within the first well region of the first dopant type.
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申请公布号 |
US8507988(B2) |
申请公布日期 |
2013.08.13 |
申请号 |
US20100792055 |
申请日期 |
2010.06.02 |
申请人 |
YAO CHIH-WEN;PAN ROBERT S. J.;LIU RUEY-HSIN;CHOU HSUEH-LIANG;CHIANG PUO-YU;CHEN CHI-CHIH;TUAN HSIAO CHIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YAO CHIH-WEN;PAN ROBERT S. J.;LIU RUEY-HSIN;CHOU HSUEH-LIANG;CHIANG PUO-YU;CHEN CHI-CHIH;TUAN HSIAO CHIN |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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