发明名称 High voltage devices, systems, and methods for forming the high voltage devices
摘要 A high voltage (HV) device includes a gate dielectric structure over a substrate. The gate dielectric structure has a first portion and a second portion. The first portion has a first thickness and is over a first well region of a first dopant type in the substrate. The second portion has a second thickness and is over a second well region of a second dopant type. The first thickness is larger than the second thickness. A gate electrode is disposed over the gate dielectric structure. A metallic layer is over and coupled with the gate electrode. The metallic layer extends along a direction of a channel under the gate dielectric structure. At least one source/drain (S/D) region is disposed within the first well region of the first dopant type.
申请公布号 US8507988(B2) 申请公布日期 2013.08.13
申请号 US20100792055 申请日期 2010.06.02
申请人 YAO CHIH-WEN;PAN ROBERT S. J.;LIU RUEY-HSIN;CHOU HSUEH-LIANG;CHIANG PUO-YU;CHEN CHI-CHIH;TUAN HSIAO CHIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 YAO CHIH-WEN;PAN ROBERT S. J.;LIU RUEY-HSIN;CHOU HSUEH-LIANG;CHIANG PUO-YU;CHEN CHI-CHIH;TUAN HSIAO CHIN
分类号 H01L29/66 主分类号 H01L29/66
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