发明名称 |
Method for processing a thin film micro device on a substrate |
摘要 |
A method for processing a thin film micro device on a substrate includes: 1) depositing a carbon film on the substrate as a sacrificial layer; 2) photolithographically defining a first predetermined pattern in the carbon film; 3) etching an unwanted portion of the carbon film outside the first predetermined pattern; 4) depositing a structural film including a single or multiple layers of solid state materials; 5) photolithographically defining a second predetermined pattern in the structural film; 6) etching the discarded portion of the structural film outside the second predetermined pattern; 7) selectively removing the remaining portion of the sacrificial carbon film by using a selective etch process gas in a reactor chamber, so that the overlapped portion of the remaining structural element with the first predetermined pattern is suspended above an underneath cavity above the substrate.
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申请公布号 |
US8507385(B2) |
申请公布日期 |
2013.08.13 |
申请号 |
US20090435835 |
申请日期 |
2009.05.05 |
申请人 |
TANG DEMING;SHANGHAI LEXVU OPTO MICROELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
TANG DEMING |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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