发明名称 |
Method of forming a semiconductor device having a cut-way hole to expose a portion of a hardmask layer |
摘要 |
A method of forming a semiconductor device having a substrate, an active region and an inactive region includes: forming a hardmask layer over the substrate; transferring a first pattern into the hardmask layer in the active region of the semiconductor device; forming one or more fills in the inactive region; forming a cut-away hole within, covering, or partially covering, the one or more fills to expose a portion of the hardmask layer, the exposed portion being within the one or more fills; and exposing the hardmask layer to an etchant to divide the first pattern into a second pattern including at least two separate elements.
|
申请公布号 |
US8507346(B2) |
申请公布日期 |
2013.08.13 |
申请号 |
US20100949148 |
申请日期 |
2010.11.18 |
申请人 |
BURKHARDT MARTIN;COLBURN MATTHEW E.;GABOR ALLEN H.;GLUSCHENKOV OLEG;HALLE SCOTT D.;LANDIS HOWARD S.;WANG HELEN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BURKHARDT MARTIN;COLBURN MATTHEW E.;GABOR ALLEN H.;GLUSCHENKOV OLEG;HALLE SCOTT D.;LANDIS HOWARD S.;WANG HELEN |
分类号 |
H01L21/336;H01L21/302;H01L21/311;H01L21/3205;H01L21/338;H01L21/461;H01L21/4763;H01L21/8234;H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|